FJAF4210YTU

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Mfr.Part #
FJAF4210YTU
Manufacturer
onsemi
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
TRANS PNP 140V 10A TO3PF
Stock
4,211
In Stock :
4,211

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
90 @ 3A 4V
Emitter Base Voltage (VEBO) :
-6V
Transition Frequency :
30MHz
Mounting Type :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
500mV @ 500mA, 5A
Packaging :
Tube
Operating Temperature :
150°C TJ
hFE Min :
50
Power Dissipation :
80W
Published :
2011
Lead Free :
Lead Free
Number of Elements :
1
Current Rating :
-10A
Collector Emitter Voltage (VCEO) :
140V
ECCN Code :
EAR99
Mount :
Through Hole
JESD-609 Code :
e3
Weight :
6.962g
Transistor Application :
AMPLIFIER
Gain Bandwidth Product :
30MHz
Number of Terminations :
3
Package / Case :
TO-3P-3 Full Pack
Element Configuration :
Single
Voltage - Rated DC :
-140V
Factory Lead Time :
6 Weeks
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 weeks ago)
Current - Collector Cutoff (Max) :
10μA ICBO
Polarity/Channel Type :
PNP
Max Power Dissipation :
80W
Frequency :
30MHz
Collector Base Voltage (VCBO) :
-200V
Max Collector Current :
10A
Terminal Finish :
Tin (Sn)
Collector Emitter Breakdown Voltage :
140V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
RoHS Status :
RoHS Compliant
Collector Emitter Saturation Voltage :
-500mV
Transistor Type :
PNP
Radiation Hardening :
No
Pbfree Code :
yes
Introducing Transistors - Bipolar (BJT) - Single onsemi FJAF4210YTU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Number of Terminations:3, Package / Case:TO-3P-3 Full Pack, Number of Pins:3, FJAF4210YTU pinout, FJAF4210YTU datasheet PDF, FJAF4210YTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJAF4210YTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJAF4210YTU


PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-3P-3 Full Pack Tube Through Hole

FJAF4210YTU Overview


This device has a DC current gain of 90 @ 3A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 500mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.This device has a current rating of -10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 30MHz.A maximum collector current of 10A volts is possible.

FJAF4210YTU Features


the DC current gain for this device is 90 @ 3A 4V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 500mA, 5A
the emitter base voltage is kept at -6V
the current rating of this device is -10A
a transition frequency of 30MHz


FJAF4210YTU Applications


There are a lot of ON Semiconductor
FJAF4210YTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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