FJAF4210RTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Element Configuration :

Single

Lead Free :

Lead Free

Package / Case :

TO-3P-3 Full Pack

Mount :

Through Hole

Max Power Dissipation :

80W

Packaging :

Tube

Current Rating :

-10A

Power Dissipation :

80W

Voltage - Rated DC :

-140V

Collector Base Voltage (VCBO) :

-200V

Operating Temperature :

150°C TJ

Published :

2017

Max Collector Current :

10A

Weight :

6.962g

Collector Emitter Breakdown Voltage :

140V

Current - Collector Cutoff (Max) :

10μA ICBO

Transistor Type :

PNP

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 weeks ago)

Emitter Base Voltage (VEBO) :

-6V

JESD-609 Code :

e3

Factory Lead Time :

6 Weeks

Terminal Finish :

Tin (Sn)

Collector Emitter Voltage (VCEO) :

140V

Mounting Type :

Through Hole

hFE Min :

50

RoHS Status :

RoHS Compliant

Frequency :

30MHz

Number of Elements :

1

Transition Frequency :

30MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

30MHz

Number of Pins :

3

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 3A 4V

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

-500mV

Polarity/Channel Type :

PNP

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

500mV @ 500mA, 5A

ECCN Code :

EAR99