FJAF4310YTU

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Mfr.Part #
FJAF4310YTU
Manufacturer
onsemi
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
TRANS NPN 140V 10A TO3PF
Stock
10,187
In Stock :
10,187

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
150°C TJ
Transistor Type :
NPN
Polarity/Channel Type :
NPN
ECCN Code :
EAR99
Terminal Finish :
Tin (Sn)
Weight :
6.962g
Published :
2009
Radiation Hardening :
No
Collector Emitter Saturation Voltage :
500mV
Lead Free :
Lead Free
Current Rating :
10A
DC Current Gain (hFE) (Min) @ Ic, Vce :
90 @ 3A 4V
Power Dissipation :
80W
Gain Bandwidth Product :
30MHz
Emitter Base Voltage (VEBO) :
6V
Number of Elements :
1
Factory Lead Time :
6 Weeks
Number of Terminations :
3
hFE Min :
50
Collector Emitter Voltage (VCEO) :
140V
Max Power Dissipation :
80W
Vce Saturation (Max) @ Ib, Ic :
500mV @ 500mA, 5A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Mount :
Through Hole
Packaging :
Tube
Frequency :
30MHz
Current - Collector Cutoff (Max) :
10μA ICBO
Collector Emitter Breakdown Voltage :
140V
Voltage - Rated DC :
140V
Number of Pins :
3
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Max Collector Current :
10A
RoHS Status :
RoHS Compliant
Transistor Application :
AMPLIFIER
Collector Base Voltage (VCBO) :
200V
Transition Frequency :
30MHz
Pbfree Code :
yes
Element Configuration :
Single
Package / Case :
TO-3P-3 Full Pack
Introducing Transistors - Bipolar (BJT) - Single onsemi FJAF4310YTU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-3P-3 Full Pack, FJAF4310YTU pinout, FJAF4310YTU datasheet PDF, FJAF4310YTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJAF4310YTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJAF4310YTU


NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3 Full Pack Tube Through Hole

FJAF4310YTU Overview


In this device, the DC current gain is 90 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 500mA, 5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (10A).30MHz is present in the transition frequency.Maximum collector currents can be below 10A volts.

FJAF4310YTU Features


the DC current gain for this device is 90 @ 3A 4V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 10A
a transition frequency of 30MHz


FJAF4310YTU Applications


There are a lot of ON Semiconductor
FJAF4310YTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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