FJAF4310YTU
- Mfr.Part #
- FJAF4310YTU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 140V 10A TO3PF
- Stock
- 10,187
- In Stock :
- 10,187
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Weight :
- 6.962g
- Published :
- 2009
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 500mV
- Lead Free :
- Lead Free
- Current Rating :
- 10A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 90 @ 3A 4V
- Power Dissipation :
- 80W
- Gain Bandwidth Product :
- 30MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Elements :
- 1
- Factory Lead Time :
- 6 Weeks
- Number of Terminations :
- 3
- hFE Min :
- 50
- Collector Emitter Voltage (VCEO) :
- 140V
- Max Power Dissipation :
- 80W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 500mA, 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Packaging :
- Tube
- Frequency :
- 30MHz
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Emitter Breakdown Voltage :
- 140V
- Voltage - Rated DC :
- 140V
- Number of Pins :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Max Collector Current :
- 10A
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 200V
- Transition Frequency :
- 30MHz
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Package / Case :
- TO-3P-3 Full Pack
- Datasheets
- FJAF4310YTU
FJAF4310YTU Documents
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3 Full Pack Tube Through Hole
FJAF4310YTU Overview
In this device, the DC current gain is 90 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 500mA, 5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (10A).30MHz is present in the transition frequency.Maximum collector currents can be below 10A volts.
FJAF4310YTU Features
the DC current gain for this device is 90 @ 3A 4V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 10A
a transition frequency of 30MHz
FJAF4310YTU Applications
There are a lot of ON Semiconductor
FJAF4310YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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