FJAF4310YTU
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- Mfr.Part #
- FJAF4310YTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 140V 10A TO3PF-3
- Stock
- 558
- In Stock ：
- 558
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 140V
- Frequency :
- 30MHz
- Published :
- 2009
- Polarity/Channel Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Gain Bandwidth Product :
- 30MHz
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 90 @ 3A 4V
- Emitter Base Voltage (VEBO) :
- 6V
- hFE Min :
- 50
- Collector Emitter Saturation Voltage :
- 500mV
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- RoHS Compliant
- JESD-609 Code :
- e3
- Power Dissipation :
- 80W
- Collector Base Voltage (VCBO) :
- 200V
- Number of Pins :
- 3
- Current Rating :
- 10A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 6 Weeks
- Max Power Dissipation :
- 80W
- Lead Free :
- Lead Free
- Max Collector Current :
- 10A
- Package / Case :
- TO-3P-3 Full Pack
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 140V
- Element Configuration :
- Single
- Number of Elements :
- 1
- Voltage - Rated DC :
- 140V
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 500mA, 5A
- Number of Terminations :
- 3
- Transition Frequency :
- 30MHz
- Weight :
- 6.962g
- Datasheets
- FJAF4310YTU
FJAF4310YTU Documents
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3 Full Pack Tube Through Hole
FJAF4310YTU Overview
In this device, the DC current gain is 90 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 500mA, 5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (10A).30MHz is present in the transition frequency.Maximum collector currents can be below 10A volts.
FJAF4310YTU Features
the DC current gain for this device is 90 @ 3A 4V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 10A
a transition frequency of 30MHz
FJAF4310YTU Applications
There are a lot of ON Semiconductor
FJAF4310YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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