FJAFS1720TU
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- Mfr.Part #
- FJAFS1720TU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 800V 12A TO3PF
- Stock
- 6,973
- In Stock ：
- 6,973
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- ESBC™
- ECCN Code :
- EAR99
- Width :
- 5.7mm
- Collector Emitter Breakdown Voltage :
- 800V
- Power Dissipation :
- 60W
- Frequency :
- 15MHz
- Number of Elements :
- 1
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 15MHz
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 3.33A, 10A
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Max Power Dissipation :
- 60W
- Collector Base Voltage (VCBO) :
- 1.7kV
- hFE Min :
- 8
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 800V
- Max Collector Current :
- 12A
- Current - Collector Cutoff (Max) :
- 100μA
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8.5 @ 11A 5V
- Height :
- 26.7mm
- Factory Lead Time :
- 52 Weeks
- Length :
- 15.7mm
- Collector Emitter Saturation Voltage :
- 250mV
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Packaging :
- Tube
- Package / Case :
- TO-3P-3 Full Pack
- Operating Temperature :
- -55°C~125°C TJ
- Mount :
- Through Hole
- Transistor Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Weight :
- 6.961991g
- Datasheets
- FJAFS1720TU
FJAFS1720TU Documents
NPN -55°C~125°C TJ 100μA 1 Elements NPN TO-3P-3 Full Pack Tube Through Hole
FJAFS1720TU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 8.5 @ 11A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 3.33A, 10A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.During maximum operation, collector current can be as low as 12A volts.
FJAFS1720TU Features
the DC current gain for this device is 8.5 @ 11A 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 3.33A, 10A
the emitter base voltage is kept at 6V
FJAFS1720TU Applications
There are a lot of ON Semiconductor
FJAFS1720TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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