FJAFS1510ATU
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- Mfr.Part #
- FJAFS1510ATU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 750V 6A TO3PF
- Stock
- 240
- In Stock ：
- 240
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~125°C TJ
- Transition Frequency :
- 15.4MHz
- Collector Emitter Breakdown Voltage :
- 750V
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Frequency - Transition :
- 15.4MHz
- Radiation Hardening :
- No
- Width :
- 5.5mm
- Case Connection :
- Isolated
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Additional Feature :
- AVALANCHE RATED
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 7 @ 3A 5V
- Weight :
- 6.962g
- Max Collector Current :
- 6A
- hFE Min :
- 15
- Collector Base Voltage (VCBO) :
- 1.55kV
- Packaging :
- Tube
- Current - Collector Cutoff (Max) :
- 100μA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Max Frequency :
- 1MHz
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 500mV
- JESD-609 Code :
- e3
- Series :
- ESBC™
- Published :
- 2012
- Number of Terminations :
- 3
- Power Dissipation :
- 60W
- Length :
- 15.5mm
- Package / Case :
- TO-3P-3 Full Pack
- Factory Lead Time :
- 6 Weeks
- Height :
- 14.5mm
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 60W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1.5A, 6A
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 750V
- Mounting Type :
- Through Hole
- Datasheets
- FJAFS1510ATU
FJAFS1510ATU Documents
NPN -55°C~125°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-3P-3 Full Pack Tube Through Hole
FJAFS1510ATU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 7 @ 3A 5V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1.5A, 6A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 15.4MHz is present in the part.Collector current can be as low as 6A volts at its maximum.
FJAFS1510ATU Features
the DC current gain for this device is 7 @ 3A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1.5A, 6A
the emitter base voltage is kept at 6V
a transition frequency of 15.4MHz
FJAFS1510ATU Applications
There are a lot of ON Semiconductor
FJAFS1510ATU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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