FJAFS1510ATU
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- Mfr.Part #
- FJAFS1510ATU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 750V 6A TO3PF
- Stock
- 5,400
- In Stock ：
- 5,400
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Case Connection :
- Isolated
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 7 @ 3A 5V
- Operating Temperature :
- -55°C~125°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1.5A, 6A
- Length :
- 15.5mm
- Collector Emitter Saturation Voltage :
- 500mV
- hFE Min :
- 15
- Max Frequency :
- 1MHz
- Collector Emitter Voltage (VCEO) :
- 750V
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-3P-3 Full Pack
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 1.55kV
- Additional Feature :
- AVALANCHE RATED
- Lead Free :
- Lead Free
- Frequency - Transition :
- 15.4MHz
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 60W
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 100μA
- Packaging :
- Tube
- Element Configuration :
- Single
- Width :
- 5.5mm
- Series :
- ESBC™
- Height :
- 14.5mm
- Number of Terminations :
- 3
- Max Collector Current :
- 6A
- Power Dissipation :
- 60W
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 750V
- Factory Lead Time :
- 6 Weeks
- Weight :
- 6.962g
- RoHS Status :
- RoHS Compliant
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 15.4MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2012
- Datasheets
- FJAFS1510ATU
FJAFS1510ATU Documents
NPN -55°C~125°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-3P-3 Full Pack Tube Through Hole
FJAFS1510ATU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 7 @ 3A 5V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1.5A, 6A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 15.4MHz is present in the part.Collector current can be as low as 6A volts at its maximum.
FJAFS1510ATU Features
the DC current gain for this device is 7 @ 3A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1.5A, 6A
the emitter base voltage is kept at 6V
a transition frequency of 15.4MHz
FJAFS1510ATU Applications
There are a lot of ON Semiconductor
FJAFS1510ATU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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