FF600R12KE4BOSA1

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Mfr.Part #
FF600R12KE4BOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MODULE 1200V 600A
Stock
543
In Stock :
543

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
ECCN Code :
EAR99
Additional Feature :
UL APPROVED
Voltage - Collector Emitter Breakdown (Max) :
1200V
Number of Terminations :
7
Configuration :
Half Bridge
NTC Thermistor :
No
Terminal Position :
UPPER
IGBT Type :
Trench Field Stop
Turn On Time :
232 ns
Input :
Standard
Surface Mount :
No
Current - Collector Cutoff (Max) :
5mA
Number of Elements :
2
Series :
C
Current - Collector (Ic) (Max) :
600A
Factory Lead Time :
14 Weeks
Case Connection :
Isolated
Mounting Type :
Chassis Mount
Turn Off Time-Nom (toff) :
630 ns
Input Capacitance (Cies) @ Vce :
38nF @ 25V
Published :
2002
Package / Case :
Module
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-40°C~150°C
JESD-30 Code :
R-XUFM-X7
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce(on) (Max) @ Vge, Ic :
2.2V @ 15V, 600A
Datasheets
FF600R12KE4BOSA1
Introducing Transistors - IGBTs - Modules Infineon Technologies FF600R12KE4BOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:7, Mounting Type:Chassis Mount, Package / Case:Module, Operating Temperature:-40°C~150°C, FF600R12KE4BOSA1 pinout, FF600R12KE4BOSA1 datasheet PDF, FF600R12KE4BOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FF600R12KE4BOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FF600R12KE4BOSA1


FF600R12KE4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FF600R12KE4BOSA1 Description


FF600R12KE4BOSA1 belongs to the family of insulated gate bipolar transistors provided by Infineon Technologies. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications. 



FF600R12KE4BOSA1 Features


Energy saving

Easy installation and maintenance

Stable heat dissipation

Low switching losses

Unbeatable robustness



FF600R12KE4BOSA1 Applications


High-power converters

Motor drives

UPS systems

Wind turbines


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