FF600R12IE4VBOSA1

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Mfr.Part #
FF600R12IE4VBOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1200V 600A 3350W
Stock
4
In Stock :
4

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Terminal Form :
UNSPECIFIED
Turn On Time :
410 ns
Input Capacitance (Cies) @ Vce :
37nF @ 25V
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Published :
2002
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
5mA
Factory Lead Time :
50 Weeks
Halogen Free :
Not Halogen Free
Operating Temperature :
-40°C~150°C
Element Configuration :
Dual
Power - Max :
3350W
IGBT Type :
Trench Field Stop
Transistor Application :
GENERAL PURPOSE
JESD-30 Code :
R-PUFM-X10
Configuration :
2 Independent
Polarity/Channel Type :
N-Channel
Voltage - Collector Emitter Breakdown (Max) :
1200V
Mounting Type :
Chassis Mount
Surface Mount :
No
Transistor Element Material :
SILICON
Current - Collector (Ic) (Max) :
600A
RoHS Status :
Non-RoHS Compliant
Lead Free :
Contains Lead
NTC Thermistor :
yes
Case Connection :
Isolated
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
2
Terminal Position :
UPPER
Turn Off Time-Nom (toff) :
1020 ns
Number of Terminations :
10
Vce(on) (Max) @ Vge, Ic :
2.05V @ 15V, 600A
Input :
Standard
Package / Case :
Module
Datasheets
FF600R12IE4VBOSA1
Introducing Transistors - IGBTs - Modules Infineon Technologies FF600R12IE4VBOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~150°C, Mounting Type:Chassis Mount, Number of Terminations:10, Package / Case:Module, FF600R12IE4VBOSA1 pinout, FF600R12IE4VBOSA1 datasheet PDF, FF600R12IE4VBOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FF600R12IE4VBOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FF600R12IE4VBOSA1


FF600R12IE4VBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FF600R12IE4VBOSA1                    Description

 

An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.



FF600R12IE4VBOSA1                     Applications

·High Power Converters

·Motor Drives

·Servo Drives

·UPS Systems

·Wind Turbines

 

FF600R12IE4VBOSA1                    Features

·Low VCEsat

·Tvjop =150°℃

·VCEsat with positive Temperature Coefficient

 

Mechanical Features

·High Power Density

·lsolated Base Plate

·Standard Housing

 


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