FF600R12IS4F

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Modules

Turn On Time :

270 ns

Input Capacitance (Cies) @ Vce :

39nF @ 25V

Polarity/Channel Type :

N-Channel

Package / Case :

Module

Pbfree Code :

yes

Factory Lead Time :

52 Weeks

Gate-Emitter Voltage-Max :

20V

Voltage - Collector Emitter Breakdown (Max) :

1200V

RoHS Status :

ROHS3 Compliant

Max Collector Current :

600A

Number of Pins :

10

Number of Terminations :

7

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

UPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

POWER CONTROL

Lead Free :

Contains Lead

Element Configuration :

Dual

Operating Temperature :

-40°C~125°C

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

5mA

Collector Emitter Voltage (VCEO) :

1.2kV

JESD-30 Code :

R-XUFM-X7

Terminal Form :

UNSPECIFIED

Mount :

Screw

NTC Thermistor :

yes

Configuration :

2 Independent

VCEsat-Max :

3.75 V

Halogen Free :

Not Halogen Free

Transistor Element Material :

SILICON

Power - Max :

3700W

Pin Count :

11

Mounting Type :

Chassis Mount

Vce(on) (Max) @ Vge, Ic :

3.75V @ 15V, 600A

Input :

Standard

Published :

2013

Turn Off Time-Nom (toff) :

630 ns

Case Connection :

Isolated

Power Dissipation-Max (Abs) :

3700W