FDZ2553N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Series :

PowerTrench®

Number of Elements :

2

Pulsed Drain Current-Max (IDM) :

20A

Surface Mount :

yes

Terminal Finish :

TIN SILVER

Terminal Position :

BOTTOM

DS Breakdown Voltage-Min :

20V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

14m Ω @ 9.6A, 4.5V

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Power - Max :

2.1W

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

20V

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

1299pF @ 10V

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

9.6A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

18

Drain Current-Max (Abs) (ID) :

9.6A

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.014Ohm

Terminal Form :

Ball

Pbfree Code :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

18-WFBGA

JESD-609 Code :

e2

Transistor Application :

SWITCHING

FET Feature :

Logic Level Gate

Pin Count :

18

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PBGA-B18