FDZ209N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

COMMERCIAL

Number of Elements :

1

Terminal Finish :

TIN SILVER

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

657pF @ 30V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

60V

Drain Current-Max (Abs) (ID) :

4A

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

12-WFBGA

Reach Compliance Code :

Unknown

Pbfree Code :

No

Terminal Form :

Ball

Pin Count :

12

JESD-30 Code :

R-PBGA-B12

JESD-609 Code :

e2

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

Pulsed Drain Current-Max (IDM) :

20A

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 5V

Power Dissipation-Max :

2W Ta

Drain-source On Resistance-Max :

0.08Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

80m Ω @ 4A, 5V

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Terminal Position :

BOTTOM

Drive Voltage (Max Rds On,Min Rds On) :

5V

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

90 mJ

Number of Terminations :

12