FDZ209N
- Mfr.Part #
- FDZ209N
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 12-WFBGA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 4A 12BGA
- Stock
- 20,644
- In Stock :
- 20,644
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Pbfree Code :
- No
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drain-source On Resistance-Max :
- 0.08Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 2W Ta
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Qualification Status :
- COMMERCIAL
- Terminal Position :
- BOTTOM
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 5V
- Series :
- PowerTrench®
- Number of Terminations :
- 12
- Package / Case :
- 12-WFBGA
- Avalanche Energy Rating (Eas) :
- 90 mJ
- Reach Compliance Code :
- Unknown
- JESD-30 Code :
- R-PBGA-B12
- Drain Current-Max (Abs) (ID) :
- 4A
- JESD-609 Code :
- e2
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 60V
- Terminal Form :
- Ball
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Pin Count :
- 12
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 20A
- DS Breakdown Voltage-Min :
- 60V
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 4A, 5V
- Terminal Finish :
- TIN SILVER
- Input Capacitance (Ciss) (Max) @ Vds :
- 657pF @ 30V
- Datasheets
- FDZ209N
FDZ209N Documents

N-Channel Tape & Reel (TR) 80m Ω @ 4A, 5V ±20V 657pF @ 30V 9nC @ 5V 60V 12-WFBGA
FDZ209N Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 90 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 657pF @ 30V.There is no drain current on this device since the maximum continuous current it can conduct is 4A.There is a peak drain current of 20A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V).
FDZ209N Features
the avalanche energy rating (Eas) is 90 mJ
based on its rated peak drain current 20A.
a 60V drain to source voltage (Vdss)
FDZ209N Applications
There are a lot of Rochester Electronics, LLC
FDZ209N applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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