FDZ209N

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Mfr.Part #
FDZ209N
Manufacturer
Fairchild Semiconductor
Package / Case
12-WFBGA
Datasheet
Download
Description
MOSFET N-CH 60V 4A 12BGA
Stock
20,644
In Stock :
20,644

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Pbfree Code :
No
Packaging :
Tape and Reel (TR)
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
3V @ 250µA
Drain-source On Resistance-Max :
0.08Ohm
Configuration :
SINGLE WITH BUILT-IN DIODE
Surface Mount :
yes
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
2W Ta
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
4A Ta
Mounting Type :
Surface Mount
FET Type :
N-Channel
Qualification Status :
COMMERCIAL
Terminal Position :
BOTTOM
Gate Charge (Qg) (Max) @ Vgs :
9nC @ 5V
Series :
PowerTrench®
Number of Terminations :
12
Package / Case :
12-WFBGA
Avalanche Energy Rating (Eas) :
90 mJ
Reach Compliance Code :
Unknown
JESD-30 Code :
R-PBGA-B12
Drain Current-Max (Abs) (ID) :
4A
JESD-609 Code :
e2
RoHS Status :
ROHS3 Compliant
Drain to Source Voltage (Vdss) :
60V
Terminal Form :
Ball
Peak Reflow Temperature (Cel) :
260
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
5V
Pin Count :
12
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
20A
DS Breakdown Voltage-Min :
60V
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
80m Ω @ 4A, 5V
Terminal Finish :
TIN SILVER
Input Capacitance (Ciss) (Max) @ Vds :
657pF @ 30V
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDZ209N from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:12, Package / Case:12-WFBGA, FDZ209N pinout, FDZ209N datasheet PDF, FDZ209N amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDZ209N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDZ209N


N-Channel Tape & Reel (TR) 80m Ω @ 4A, 5V ±20V 657pF @ 30V 9nC @ 5V 60V 12-WFBGA

FDZ209N Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 90 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 657pF @ 30V.There is no drain current on this device since the maximum continuous current it can conduct is 4A.There is a peak drain current of 20A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V).

FDZ209N Features


the avalanche energy rating (Eas) is 90 mJ
based on its rated peak drain current 20A.
a 60V drain to source voltage (Vdss)


FDZ209N Applications


There are a lot of Rochester Electronics, LLC
FDZ209N applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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