FDZ1323NZ
- Mfr.Part #
- FDZ1323NZ
- Manufacturer
- onsemi
- Package / Case
- 6-XFBGA, WLCSP
- Datasheet
- Download
- Description
- MOSFET 2N-CH 20V 10A 6WLCSP
- Stock
- 5,565
- In Stock :
- 5,565
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Power - Max :
- 500mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- Logic Level Gate
- Width :
- 1.3mm
- Feedback Cap-Max (Crss) :
- 380 pF
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Weight :
- 50mg
- Turn-Off Delay Time :
- 34 ns
- Number of Elements :
- 2
- FET Type :
- 2 N-Channel (Dual) Common Drain
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2011
- Number of Pins :
- 6
- Number of Terminations :
- 6
- Max Power Dissipation :
- 2W
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Length :
- 2.3mm
- Series :
- PowerTrench®
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 2055pF @ 10V
- JESD-609 Code :
- e1
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 1A, 4.5V
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 2W
- Terminal Form :
- Ball
- Turn On Delay Time :
- 12 ns
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Package / Case :
- 6-XFBGA, WLCSP
- Fall Time (Typ) :
- 13 ns
- Radiation Hardening :
- No
- Terminal Position :
- BOTTOM
- Height :
- 150μm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
- Drain to Source Breakdown Voltage :
- 20V
- Drain to Source Voltage (Vdss) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 10 Weeks
- Continuous Drain Current (ID) :
- 10A
- Gate to Source Voltage (Vgs) :
- 12V
- Rise Time :
- 13ns
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Datasheets
- FDZ1323NZ

FDZ1323NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDZ1323NZ Description
This particular device is intended to serve as a single package solution for ultra-portable applications such as Li-Ion battery pack protection circuits. The FDZ1323NZ reduces both PCB space and rs1S2(on)-resistance by utilizing two common drain N-channel MOSFETs, which enable bidirectional current flow, on Fairchild's innovative PowerTrench? process with cutting-edge "low pitch" WLCSP packaging method. This cutting-edge WLCSP MOSFET represents a development in packaging technique that makes it possible for the device to combine superior heat transfer properties, ultra-low profile packing, low gate charge, and low rSis2(on). -
FDZ1323NZ Features
-
only takes about 3 mm2 of PCB space.
-
When mounted to a PCB, an ultra-thin package has a height of less than 0.35 mm.
-
Ability to handle high power and current
-
3.6 kV or above for HBM ESD protection (Note 3)
-
REACH Compliant
FDZ1323NZ Applications
-
Battery administration
-
Charge switch
-
Battery security
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