FDZ191P

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Mfr.Part #
FDZ191P
Manufacturer
onsemi
Package / Case
6-UFBGA, WLCSP
Datasheet
Download
Description
MOSFET P-CH 20V 3A 6WLCSP
Stock
23,946
In Stock :
23,946

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Surface Mount
Length :
1.5mm
Drain to Source Breakdown Voltage :
-20V
Power Dissipation-Max :
1.9W Ta
Drain to Source Voltage (Vdss) :
20V
Number of Terminations :
6
Terminal Position :
BOTTOM
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Lead Free :
Lead Free
Factory Lead Time :
10 Weeks
Rise Time :
10ns
Pbfree Code :
yes
Series :
PowerTrench®
Published :
2009
Contact Plating :
Copper, Silver, Tin
Drain Current-Max (Abs) (ID) :
3A
Vgs (Max) :
±8V
Mounting Type :
Surface Mount
Transistor Element Material :
SILICON
Fall Time (Typ) :
10 ns
Input Capacitance (Ciss) (Max) @ Vds :
800pF @ 10V
Width :
1mm
Continuous Drain Current (ID) :
-3A
Height :
370μm
Turn On Delay Time :
11 ns
Current Rating :
-3A
Element Configuration :
Single
Package / Case :
6-UFBGA, WLCSP
FET Type :
P-Channel
Transistor Application :
SWITCHING
Voltage - Rated DC :
-20V
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
85m Ω @ 1A, 4.5V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Resistance :
85mOhm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Threshold Voltage :
600mV
Gate to Source Voltage (Vgs) :
8V
Weight :
54mg
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
1.5W
Current - Continuous Drain (Id) @ 25°C :
3A Ta
Terminal Form :
Ball
Number of Pins :
6
Drive Voltage (Max Rds On,Min Rds On) :
1.5V 4.5V
REACH SVHC :
No SVHC
Turn-Off Delay Time :
50 ns
JESD-609 Code :
e1
Introducing Transistors - FETs, MOSFETs - Single onsemi FDZ191P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Mounting Type:Surface Mount, Package / Case:6-UFBGA, WLCSP, Operating Temperature:-55°C~150°C TJ, Number of Pins:6, FDZ191P pinout, FDZ191P datasheet PDF, FDZ191P amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDZ191P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDZ191P


P-Channel Tape & Reel (TR) 85m Ω @ 1A, 4.5V ±8V 800pF @ 10V 13nC @ 10V 20V 6-UFBGA, WLCSP

FDZ191P Description

The ON FDZ191P P-Channel MOSFET is designed on an innovative 1.5V PowerTrench process with state-of-the-art "low pitch" WLCSP packaging method, reducing PCB area and rDS (on). This sophisticated WLCSP MOSFET incorporates a packaging innovation, allowing the device to combine superior thermal transfer properties, ultra-low profile packing, low gate charge, and low rDS(on).

FDZ191P Features

Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA
Ultra-thin package: less than 0.65 mm height when mounted to PCB
RoHS Compliant
Max rDS(on) = 85mΩ at VGS = -4.5V, ID = -1A
Max rDS(on) = 123mΩ at VGS = -2.5V, ID = -1A
Max rDS(on) = 200mΩ at VGS = -1.5V, ID = -1A

FDZ191P Applications
Load Switch
Load Switch
Battery Protection
Battery Management
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