FDZ191P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Power Dissipation :

1.5W

Power Dissipation-Max :

1.9W Ta

Width :

1mm

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Terminal Position :

BOTTOM

FET Type :

P-Channel

Weight :

54mg

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Current Rating :

-3A

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Number of Pins :

6

Resistance :

85mOhm

Drain Current-Max (Abs) (ID) :

3A

Contact Plating :

Copper, Silver, Tin

Operating Temperature :

-55°C~150°C TJ

Published :

2009

Terminal Form :

Ball

Turn-Off Delay Time :

50 ns

Threshold Voltage :

600mV

Lead Free :

Lead Free

Package / Case :

6-UFBGA, WLCSP

Fall Time (Typ) :

10 ns

Mounting Type :

Surface Mount

JESD-609 Code :

e1

Current - Continuous Drain (Id) @ 25°C :

3A Ta

ECCN Code :

EAR99

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drain to Source Breakdown Voltage :

-20V

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

85m Ω @ 1A, 4.5V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

REACH SVHC :

No SVHC

Factory Lead Time :

10 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Voltage - Rated DC :

-20V

Series :

PowerTrench®

Drain to Source Voltage (Vdss) :

20V

Length :

1.5mm

Height :

370μm

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 10V

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Elements :

1

Gate to Source Voltage (Vgs) :

8V

Continuous Drain Current (ID) :

-3A

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

11 ns

Rise Time :

10ns

Number of Terminations :

6

Vgs (Max) :

±8V