FDZ193P
- Mfr.Part #
- FDZ193P
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 6-UFBGA, WLCSP
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3A 6WLCSP
- Stock
- 90,805
- In Stock :
- 90,805
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 10 Weeks
- Width :
- 1.5mm
- Mount :
- Surface Mount
- Height :
- 650μm
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- -3A
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- Number of Pins :
- 6
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Terminations :
- 6
- Fall Time (Typ) :
- 10 ns
- Series :
- PowerTrench®
- Length :
- 1mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 660pF @ 10V
- Transistor Application :
- SWITCHING
- Package / Case :
- 6-UFBGA, WLCSP
- Drain to Source Breakdown Voltage :
- -20V
- Weight :
- 54mg
- Nominal Vgs :
- -900 mV
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Gate to Source Voltage (Vgs) :
- 12V
- Rise Time :
- 10ns
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Threshold Voltage :
- -900mV
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Vgs (Max) :
- ±12V
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Drain Current-Max (Abs) (ID) :
- 3A
- Terminal Form :
- Ball
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 20V
- Power Dissipation-Max :
- 1.9W Ta
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 13 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.7V 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 90mOhm
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 1.5W
- FET Type :
- P-Channel
- Published :
- 2016
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 28 ns
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 1A, 4.5V
- Datasheets
- FDZ193P

P-Channel Tape & Reel (TR) 90m Ω @ 1A, 4.5V ±12V 660pF @ 10V 10nC @ 10V 20V 6-UFBGA, WLCSP
FDZ193P Description
The FDZ193P lowers both PCB area and rDs by combining Fairchild's sophisticated 1.7V PowerTrench? technique with state-of-the-art "low pitch" WLCsP packaging process (on). This sophisticated WLCsP MOsFET is a packaging technological breakthrough that allows it to combine superior heat transfer properties, ultra-low profile packing, low gate charge, and low rDs (on).
FDZ193P Features
Vgs = -4.5V, Id = -1A, MaxDS(on) = 90m0
Vgs = -2.5V, Id = -1A, MaxDS(on) = 130m0
Vgs = -1.7V, Id = -1A, MaxDs(on)= 300m0
Only 1.5 mm in size [?009 Fairchild Semiconductor Corporation] PCB area [FDZ193P Rev.C4 (W)] Approximately half of the area of a 2 x 2 BGA.
When mounted to a PCB, ultra-thin packages have a height of less than 0.65 mm.
FDZ193P Applications
Battery administration.
Switch the load.
Battery safeguarding.
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