FDU8880
- Mfr.Part #
- FDU8880
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 13A/58A IPAK
- Stock
- 9,180
- In Stock :
- 9,180
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- No
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 30V
- Reach Compliance Code :
- Unknown
- JESD-30 Code :
- R-PSIP-T3
- Qualification Status :
- COMMERCIAL
- Drain Current-Max (Abs) (ID) :
- 35A
- Terminal Finish :
- MATTE TIN
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 35A, 10V
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Avalanche Energy Rating (Eas) :
- 53 mJ
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.013Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Series :
- PowerTrench®
- DS Breakdown Voltage-Min :
- 30V
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta 58A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.26pF @ 15V
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 55W Tc
- Packaging :
- Tube
- Datasheets
- FDU8880

N-Channel Tube 10m Ω @ 35A, 10V ±20V 1.26pF @ 15V 31nC @ 10V 30V TO-251-3 Short Leads, IPak, TO-251AA
FDU8880 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 53 mJ.A device's maximal input capacitance is 1.26pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 35A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
FDU8880 Features
the avalanche energy rating (Eas) is 53 mJ
a 30V drain to source voltage (Vdss)
FDU8880 Applications
There are a lot of Rochester Electronics, LLC
FDU8880 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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