FDU8796

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 35A, 10V

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Number of Elements :

1

Pin Count :

3

Drain-source On Resistance-Max :

0.008Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

91 mJ

Pulsed Drain Current-Max (IDM) :

305A

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Qualification Status :

COMMERCIAL

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

PowerTrench®

Number of Terminations :

3

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSIP-T3

Surface Mount :

No

Pbfree Code :

yes

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

2.61pF @ 13V

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain to Source Voltage (Vdss) :

25V

Drain Current-Max (Abs) (ID) :

35A

DS Breakdown Voltage-Min :

25V

Power Dissipation-Max :

88W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED