FDU8586

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

20V

Transistor Element Material :

SILICON

Power Dissipation-Max :

77W Tc

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

20V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 35A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2.48pF @ 10V

JESD-609 Code :

e3

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSIP-T3

Pbfree Code :

yes

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain Current-Max (Abs) (ID) :

35A

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL

Pulsed Drain Current-Max (IDM) :

354A

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Avalanche Energy Rating (Eas) :

144 mJ

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Surface Mount :

No

Series :

PowerTrench®

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

Isolated

Drain-source On Resistance-Max :

0.0055Ohm

Number of Terminations :

3