FDU8770

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

3.72pF @ 13V

Number of Terminations :

3

JESD-609 Code :

e3

Terminal Position :

Single

Number of Elements :

1

Surface Mount :

No

FET Type :

N-Channel

Power Dissipation-Max :

115W Tc

Drain-source On Resistance-Max :

0.0055Ohm

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

407A

Rds On (Max) @ Id, Vgs :

4m Ω @ 35A, 10V

Series :

PowerTrench®

Drain to Source Voltage (Vdss) :

25V

Pin Count :

3

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

113 mJ

Gate Charge (Qg) (Max) @ Vgs :

73nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

DS Breakdown Voltage-Min :

25V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Mounting Type :

Through Hole

Reach Compliance Code :

Unknown

Drain Current-Max (Abs) (ID) :

35A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSIP-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Pbfree Code :

yes

Qualification Status :

COMMERCIAL

Terminal Finish :

MATTE TIN