FDU8770

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Mfr.Part #
FDU8770
Manufacturer
Fairchild Semiconductor
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 25V 35A IPAK
Stock
1,720
In Stock :
1,720

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
4m Ω @ 35A, 10V
RoHS Status :
ROHS3 Compliant
Avalanche Energy Rating (Eas) :
113 mJ
Pbfree Code :
yes
Operating Temperature :
-55°C~175°C TJ
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Position :
Single
Pulsed Drain Current-Max (IDM) :
407A
Drain Current-Max (Abs) (ID) :
35A
Qualification Status :
COMMERCIAL
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Number of Terminations :
3
Power Dissipation-Max :
115W Tc
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
25V
Current - Continuous Drain (Id) @ 25°C :
35A Tc
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Vgs (Max) :
±20V
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
JESD-30 Code :
R-PSIP-T3
JESD-609 Code :
e3
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Series :
PowerTrench®
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
3.72pF @ 13V
Gate Charge (Qg) (Max) @ Vgs :
73nC @ 10V
Surface Mount :
No
Reach Compliance Code :
Unknown
Terminal Finish :
MATTE TIN
Drain to Source Voltage (Vdss) :
25V
Configuration :
SINGLE WITH BUILT-IN DIODE
Pin Count :
3
Drain-source On Resistance-Max :
0.0055Ohm
Datasheets
FDU8770
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDU8770 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, FDU8770 pinout, FDU8770 datasheet PDF, FDU8770 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDU8770 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDU8770


N-Channel Tube 4m Ω @ 35A, 10V ±20V 3.72pF @ 13V 73nC @ 10V 25V TO-251-3 Short Leads, IPak, TO-251AA

FDU8770 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 113 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3.72pF @ 13V.The drain current is the maximum continuous current this device can conduct, which is 35A.Pulsed drain current is maximum rated peak drain current 407A.A normal operation of the DS requires keeping the breakdown voltage above 25V.This transistor requires a drain-source voltage (Vdss) of 25V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

FDU8770 Features


the avalanche energy rating (Eas) is 113 mJ
based on its rated peak drain current 407A.
a 25V drain to source voltage (Vdss)


FDU8770 Applications


There are a lot of Rochester Electronics, LLC
FDU8770 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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