FDU8880

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Pin Count :

3

Drain-source On Resistance-Max :

0.013Ohm

Current - Continuous Drain (Id) @ 25°C :

13A Ta 58A Tc

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1.26pF @ 15V

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

Reach Compliance Code :

Unknown

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

COMMERCIAL

Avalanche Energy Rating (Eas) :

53 mJ

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Rds On (Max) @ Id, Vgs :

10m Ω @ 35A, 10V

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSIP-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

PowerTrench®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Vgs (Max) :

±20V

Power Dissipation-Max :

55W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Mounting Type :

Through Hole

Surface Mount :

No

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

35A

DS Breakdown Voltage-Min :

30V