FDU8870
- Mfr.Part #
- FDU8870
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 21A/160A IPAK
- Stock
- 111
- In Stock :
- 111
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~175°C TJ
- Drain Current-Max (Abs) (ID) :
- 21A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 3
- Pbfree Code :
- yes
- Qualification Status :
- COMMERCIAL
- Drain to Source Voltage (Vdss) :
- 30V
- Power Dissipation-Max :
- 160W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- Unknown
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 5.16pF @ 15V
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta 160A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Surface Mount :
- No
- Series :
- PowerTrench®
- JESD-30 Code :
- R-PSIP-T3
- Terminal Finish :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.0044Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 118nC @ 10V
- Avalanche Energy Rating (Eas) :
- 690 mJ
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 30V
- Rds On (Max) @ Id, Vgs :
- 3.9m Ω @ 35A, 10V
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- FDU8870

N-Channel Tube 3.9m Ω @ 35A, 10V ±20V 5.16pF @ 15V 118nC @ 10V 30V TO-251-3 Short Leads, IPak, TO-251AA
FDU8870 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 690 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5.16pF @ 15V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 21A.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
FDU8870 Features
the avalanche energy rating (Eas) is 690 mJ
a 30V drain to source voltage (Vdss)
FDU8870 Applications
There are a lot of Rochester Electronics, LLC
FDU8870 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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