FDT461N
- Mfr.Part #
- FDT461N
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 540MA SOT223-4
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 100V
- Terminal Finish :
- MATTE TIN
- Power Dissipation-Max :
- 1.13W Ta
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 2Ohm
- Drain Current-Max (Abs) (ID) :
- 0.54A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Qualification Status :
- COMMERCIAL
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- yes
- Series :
- PowerTrench®
- Package / Case :
- TO-261-4, TO-261AA
- Gate Charge (Qg) (Max) @ Vgs :
- 4nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 540mA Ta
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Pin Count :
- 4
- JESD-30 Code :
- R-PDSO-G4
- DS Breakdown Voltage-Min :
- 100V
- Mounting Type :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 6.3 mJ
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Number of Terminations :
- 4
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 540mA, 10V
- Reach Compliance Code :
- Unknown
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 74pF @ 25V
- Datasheets
- FDT461N

N-Channel Tape & Reel (TR) 2 Ω @ 540mA, 10V ±20V 74pF @ 25V 4nC @ 10V 100V TO-261-4, TO-261AA
FDT461N Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 6.3 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 74pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [0.54A] according to its drain current.The DS breakdown voltage should be maintained above 100V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
FDT461N Features
the avalanche energy rating (Eas) is 6.3 mJ
a 100V drain to source voltage (Vdss)
FDT461N Applications
There are a lot of Rochester Electronics, LLC
FDT461N applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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