FDT461N

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Mfr.Part #
FDT461N
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET N-CH 100V 540MA SOT223-4
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
100V
Terminal Finish :
MATTE TIN
Power Dissipation-Max :
1.13W Ta
Vgs(th) (Max) @ Id :
2V @ 250μA
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
2Ohm
Drain Current-Max (Abs) (ID) :
0.54A
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Qualification Status :
COMMERCIAL
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
260
Surface Mount :
yes
Series :
PowerTrench®
Package / Case :
TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs :
4nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
540mA Ta
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Pin Count :
4
JESD-30 Code :
R-PDSO-G4
DS Breakdown Voltage-Min :
100V
Mounting Type :
Surface Mount
Avalanche Energy Rating (Eas) :
6.3 mJ
FET Type :
N-Channel
Terminal Form :
Gull wing
Number of Terminations :
4
Packaging :
Tape and Reel (TR)
Terminal Position :
Dual
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
2 Ω @ 540mA, 10V
Reach Compliance Code :
Unknown
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
74pF @ 25V
Datasheets
FDT461N
Introducing Transistors - FETs, MOSFETs - Single onsemi FDT461N from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, Number of Terminations:4, FDT461N pinout, FDT461N datasheet PDF, FDT461N amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDT461N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDT461N


N-Channel Tape & Reel (TR) 2 Ω @ 540mA, 10V ±20V 74pF @ 25V 4nC @ 10V 100V TO-261-4, TO-261AA

FDT461N Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 6.3 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 74pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [0.54A] according to its drain current.The DS breakdown voltage should be maintained above 100V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

FDT461N Features


the avalanche energy rating (Eas) is 6.3 mJ
a 100V drain to source voltage (Vdss)


FDT461N Applications


There are a lot of Rochester Electronics, LLC
FDT461N applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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