FDT457N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

5 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-65°C~150°C TJ

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Weight :

250.2mg

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Height :

1.8mm

Vgs (Max) :

±20V

Number of Channels :

1

ECCN Code :

EAR99

Package / Case :

TO-261-4, TO-261AA

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

5A

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

5.9nC @ 5V

Resistance :

60mOhm

Terminal Position :

Dual

Power Dissipation-Max :

3W Ta

Continuous Drain Current (ID) :

5A

Terminal Form :

Gull wing

Terminal Finish :

Tin

Mount :

Surface Mount

Case Connection :

DRAIN

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 15V

Mounting Type :

Surface Mount

Number of Pins :

4

Number of Terminations :

4

RoHS Status :

ROHS3 Compliant

Width :

3.56mm

Power Dissipation :

3W

Turn-Off Delay Time :

12 ns

Rise Time :

12ns

Published :

2017

Voltage - Rated DC :

30V

Threshold Voltage :

1.6V

Transistor Application :

SWITCHING

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

18 Weeks

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Rds On (Max) @ Id, Vgs :

60m Ω @ 5A, 10V

Current Rating :

5A

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 10 hours ago)

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

6.5mm

Max Junction Temperature (Tj) :

150°C

Fall Time (Typ) :

3 ns

Number of Elements :

1