FDT434P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.05Ohm

Pulsed Drain Current-Max (IDM) :

30A

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

20V

Power Dissipation-Max :

3W Ta

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1.187pF @ 10V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

50m Ω @ 6A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

20V

JESD-30 Code :

R-PDSO-G4

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Series :

PowerTrench®

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Terminal Form :

Gull wing

Surface Mount :

yes

Pbfree Code :

yes

Transistor Element Material :

SILICON

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

Package / Case :

TO-261-4, TO-261AA

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1V @ 250μA

Vgs (Max) :

±8V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Drain Current-Max (Abs) (ID) :

6A

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Pin Count :

4