FDT439N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

30V

Fall Time (Typ) :

10 ns

Gate to Source Voltage (Vgs) :

8V

Vgs(th) (Max) @ Id :

1V @ 250μA

Max Junction Temperature (Tj) :

150°C

Lifecycle Status :

ACTIVE (Last Updated: 10 hours ago)

Continuous Drain Current (ID) :

6.3A

ECCN Code :

EAR99

Turn On Delay Time :

6 ns

Height :

1.8mm

Package / Case :

TO-261-4, TO-261AA

Dual Supply Voltage :

30V

Pulsed Drain Current-Max (IDM) :

20A

Resistance :

45mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Vgs (Max) :

±8V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Power Dissipation :

3W

Published :

1999

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 15V

Turn-Off Delay Time :

30 ns

Weight :

250.2mg

Threshold Voltage :

670mV

Nominal Vgs :

670 mV

Terminal Position :

Dual

REACH SVHC :

No SVHC

Current Rating :

6.3A

Termination :

SMD/SMT

Rds On (Max) @ Id, Vgs :

45m Ω @ 6.3A, 4.5V

Radiation Hardening :

No

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

3W Ta

Number of Terminations :

4

Number of Pins :

4

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Rise Time :

10ns

Contact Plating :

Tin

Number of Channels :

1

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Factory Lead Time :

18 Weeks

Element Configuration :

Single

Width :

3.56mm

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

6.3A Ta

Drain to Source Breakdown Voltage :

30V

Length :

6.5mm

JESD-609 Code :

e3

Number of Elements :

1