FDT459N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Voltage - Rated DC :

30V

Rise Time :

8.2ns

Length :

6.7mm

Package / Case :

TO-261-4, TO-261AA

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

30V

Lead Free :

Lead Free

Turn-Off Delay Time :

6 ns

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

Gate to Source Voltage (Vgs) :

20V

Current Rating :

6.5A

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

ECCN Code :

EAR99

Power Dissipation :

3W

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Power Dissipation-Max :

3W Ta

Height :

1.7mm

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

20A

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Terminal Position :

Dual

Fall Time (Typ) :

16 ns

Case Connection :

DRAIN

Pbfree Code :

yes

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PDSO-G4

Transistor Element Material :

SILICON

Width :

3.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

LIFETIME (Last Updated: 11 hours ago)

Turn On Delay Time :

5.2 ns

Weight :

250.2mg

Rds On (Max) @ Id, Vgs :

35m Ω @ 6.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

365pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Continuous Drain Current (ID) :

6.5A

Published :

1998

Number of Terminations :

4

Radiation Hardening :

No