FDT461N
- Mfr.Part #
- FDT461N
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 540MA SOT223-4
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Terminal Finish :
- MATTE TIN
- Package / Case :
- TO-261-4, TO-261AA
- Terminal Position :
- Dual
- Avalanche Energy Rating (Eas) :
- 6.3 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 0.54A
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 1.13W Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 74pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 2Ohm
- Number of Terminations :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Current - Continuous Drain (Id) @ 25°C :
- 540mA Ta
- FET Type :
- N-Channel
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 100V
- Case Connection :
- DRAIN
- Qualification Status :
- COMMERCIAL
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 100V
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PDSO-G4
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 540mA, 10V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 4nC @ 10V
- Packaging :
- Tape and Reel (TR)
- Reach Compliance Code :
- Unknown
- Terminal Form :
- Gull wing
- Pin Count :
- 4
- Series :
- PowerTrench®
- Datasheets
- FDT461N

N-Channel Tape & Reel (TR) 2 Ω @ 540mA, 10V ±20V 74pF @ 25V 4nC @ 10V 100V TO-261-4, TO-261AA
FDT461N Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 6.3 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 74pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [0.54A] according to its drain current.The DS breakdown voltage should be maintained above 100V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
FDT461N Features
the avalanche energy rating (Eas) is 6.3 mJ
a 100V drain to source voltage (Vdss)
FDT461N Applications
There are a lot of Rochester Electronics, LLC
FDT461N applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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