FDS8984-F085

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

23m Ω @ 7A, 10V

Radiation Hardening :

No

Published :

2001

FET Type :

2 N-Channel (Dual)

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Pbfree Code :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

Turn-Off Delay Time :

42 ns

Series :

Automotive, AEC-Q101, PowerTrench®

Drain to Source Breakdown Voltage :

30V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Power Dissipation :

1.6W

Input Capacitance (Ciss) (Max) @ Vds :

635pF @ 15V

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

FET Feature :

Logic Level Gate

Number of Terminations :

8

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Number of Elements :

2

Fall Time (Typ) :

21 ns

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Max Power Dissipation :

1.6W

Continuous Drain Current (ID) :

7A

Weight :

230.4mg

Turn On Delay Time :

5 ns

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

7A

Number of Pins :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Rise Time :

9ns

Pulsed Drain Current-Max (IDM) :

30A

Vgs(th) (Max) @ Id :

2.5V @ 250μA