FDS8960C
- Mfr.Part #
- FDS8960C
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- DUAL N & P-CHANNEL POWERTRENCH M
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2005
- Drain to Source Breakdown Voltage :
- 35V
- Turn-Off Delay Time :
- 20 ns
- Nominal Vgs :
- 2 V
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 7A, 10V
- Additional Feature :
- FAST SWITCHING
- Weight :
- 230.4mg
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Continuous Drain Current (ID) :
- 7A
- Mount :
- Surface Mount
- Max Junction Temperature (Tj) :
- 150°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 570pF @ 15V
- Number of Elements :
- 2
- JESD-609 Code :
- e3
- Number of Pins :
- 8
- Power - Max :
- 900mW
- Rise Time :
- 16ns
- Contact Plating :
- Tin
- Height :
- 1.75mm
- Max Power Dissipation :
- 2W
- Mounting Type :
- Surface Mount
- FET Type :
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 7.7nC @ 5V
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Dual Supply Voltage :
- 35V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate to Source Voltage (Vgs) :
- 25V
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Width :
- 3.9mm
- Number of Channels :
- 2
- Resistance :
- 24mOhm
- Length :
- 4.9mm
- Operating Temperature :
- -55°C~150°C TJ
- Termination :
- SMD/SMT
- Power Dissipation :
- 2W
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 7A 5A
- Operating Mode :
- ENHANCEMENT MODE
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 7A
- Pbfree Code :
- yes
- Number of Terminations :
- 8
- FET Feature :
- Logic Level Gate
- Threshold Voltage :
- 1V
- Current Rating :
- 7A
- Fall Time (Typ) :
- 5 ns
- Series :
- PowerTrench®
- ECCN Code :
- EAR99
- Datasheets
- FDS8960C

FDS8960C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS8960C Description
These dual N-channel and P-channel enhanced mode power field effect transistors are produced using advanced PowerTritch manufacturing processes that are customized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDS8960C Features
Q1: N-Channel
7.0 A, 35 V
RDS(ON) = 24 mΩ @ VGS = 10 V
RDS(ON) = 32 mΩ @ VGS = 4.5 V
Q2: P-Channel
-5 A, -35 V
RDS(ON) = 53 mΩ @ VGS = -10 V
RDS(ON) = 87 mΩ @ VGS = -4.5 V
Fast switching speed
RoHS compliant
FDS8960C Applications
This product is general usage and suitable for many different applications.
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