FDS8928A

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Mfr.Part #
FDS8928A
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 5
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
260 ns
Operating Mode :
ENHANCEMENT MODE
Current Rating :
5.5A
Mounting Type :
Surface Mount
Mount :
Surface Mount
Terminal Position :
Dual
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Power Dissipation :
2W
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time :
8 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Threshold Voltage :
670mV
Input Capacitance (Ciss) (Max) @ Vds :
900pF @ 10V
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
-20V
Rise Time :
23ns
Nominal Vgs :
670 mV
Packaging :
Tape and Reel (TR)
FET Feature :
Logic Level Gate
Polarity/Channel Type :
N-CHANNEL AND P-CHANNEL
Pbfree Code :
yes
Number of Elements :
2
Drain to Source Voltage (Vdss) :
30V 20V
JESD-609 Code :
e3
Power - Max :
900mW
Rds On (Max) @ Id, Vgs :
30m Ω @ 5.5A, 4.5V
Gate to Source Voltage (Vgs) :
8V
Lead Free :
Lead Free
Package / Case :
8-SOIC (0.154, 3.90mm Width)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs(th) (Max) @ Id :
1V @ 250μA
Max Power Dissipation :
2W
Radiation Hardening :
No
Weight :
230.4mg
Number of Pins :
8
FET Type :
N and P-Channel
Resistance :
30mOhm
Fall Time (Typ) :
90 ns
REACH SVHC :
No SVHC
Contact Plating :
Tin
Transistor Element Material :
SILICON
Terminal Form :
Gull wing
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 4.5V
Continuous Drain Current (ID) :
5.5A
Height :
1.5mm
Number of Terminations :
8
Width :
4mm
Current - Continuous Drain (Id) @ 25°C :
5.5A 4A
Length :
5mm
Datasheets
FDS8928A
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS8928A from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Number of Terminations:8, FDS8928A pinout, FDS8928A datasheet PDF, FDS8928A amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS8928A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS8928A


FDS8928A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDS8928A           Description


 These dual N-channel and P-channel enhanced mode power field effect transistors are produced using proprietary high cell density DMOS technology. This high-density process is specially tailored to minimize on-resistance and provide excellent switching performance. These devices are particularly suitable for low-voltage applications, such as laptop power management and other battery-powered circuits, which require fast switching, low series power loss and anti-transient.

 

FDS8928A       Features

 

N-Channel

5.5A, 30V

Max. RDS(on) = 30 mΩ at VGS = 4.5 V,

Max. RDS(on) = 38 mΩ at VGS = 2.5 V

P-Channel

-4A, -20V

Max. RDS(on) = 55 mΩ at VGS = -4.5 V

Max. RDS(on) = 72 mΩ at VGS = -2.5 V

High density cell design for extremely low RDS(ON)

High power and current handling capability in a widely used surface mount package

Dual (N & P-Channel) MOSFET in surface mount package

Applications

This product is general usage and suitable for many different applications.

 

 




 

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