FDS8882

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Mfr.Part #
FDS8882
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 9A 8SOIC
Stock
26,244
In Stock :
26,244

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Position :
Dual
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
3V @ 250µA
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Rise Time :
3ns
Radiation Hardening :
No
Additional Feature :
ULTRA LOW RESISTANCE
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Power Dissipation :
2.5W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Turn On Delay Time :
7 ns
Terminal Form :
Gull wing
Weight :
130mg
Continuous Drain Current (ID) :
9A
Pbfree Code :
yes
JESD-609 Code :
e4
Lead Free :
Lead Free
Threshold Voltage :
1.7V
Number of Terminations :
8
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
20m Ω @ 9A, 10V
Nominal Vgs :
1.7 V
Power Dissipation-Max :
2.5W Ta
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±20V
Avalanche Energy Rating (Eas) :
32 mJ
Drain to Source Breakdown Voltage :
30V
Mount :
Surface Mount
Fall Time (Typ) :
4 ns
Resistance :
20mOhm
Current - Continuous Drain (Id) @ 25°C :
9A Ta
Gate to Source Voltage (Vgs) :
20V
ECCN Code :
EAR99
Turn-Off Delay Time :
19 ns
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
940pF @ 15V
RoHS Status :
ROHS3 Compliant
Series :
PowerTrench®
Number of Pins :
8
Operating Mode :
ENHANCEMENT MODE
REACH SVHC :
No SVHC
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
FET Type :
N-Channel
Factory Lead Time :
18 Weeks
Mounting Type :
Surface Mount
Drain Current-Max (Abs) (ID) :
9A
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS8882 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Terminations:8, Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, FDS8882 pinout, FDS8882 datasheet PDF, FDS8882 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS8882 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS8882


N-Channel Tape & Reel (TR) 20m Ω @ 9A, 10V ±20V 940pF @ 15V 20nC @ 10V 8-SOIC (0.154, 3.90mm Width)

FDS8882 Description


FDS8882 is a 30V N-Channel PowerTrench? MOSFET. The FDS8882 has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET FDS8882 is in the SOIC-8 package with 2.5W power dissipation.



FDS8882 Features


  • Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 9 A

  • Max rDS(on) = 22.5 mΩ at VGS = 4.5 V, ID = 8 A

  • High-performance trench technology for extremely low rDS(on) and fast switching

  • High power and current handling capability

  • Termination is Lead-free and RoHS Compliant



FDS8882 Applications


  • Notebook System Regulators

  • cellular phones 

  • laptop computers

  • photovoltaic systems 

  • wind turbines

  • shunt voltage regulator and the series voltage regulator


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