FDS8882

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.5W Ta

Drain Current-Max (Abs) (ID) :

9A

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

940pF @ 15V

Turn On Delay Time :

7 ns

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

20m Ω @ 9A, 10V

REACH SVHC :

No SVHC

JESD-609 Code :

e4

Nominal Vgs :

1.7 V

Lead Free :

Lead Free

Number of Terminations :

8

ECCN Code :

EAR99

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Series :

PowerTrench®

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Threshold Voltage :

1.7V

Terminal Position :

Dual

Turn-Off Delay Time :

19 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Mount :

Surface Mount

Fall Time (Typ) :

4 ns

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

9A

Transistor Element Material :

SILICON

FET Type :

N-Channel

Weight :

130mg

Factory Lead Time :

18 Weeks

Number of Elements :

1

Additional Feature :

ULTRA LOW RESISTANCE

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.5W

Number of Pins :

8

Rise Time :

3ns

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

32 mJ

Resistance :

20mOhm

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)