FDS8882
- Mfr.Part #
- FDS8882
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 9A 8SOIC
- Stock
- 26,244
- In Stock :
- 26,244
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rise Time :
- 3ns
- Radiation Hardening :
- No
- Additional Feature :
- ULTRA LOW RESISTANCE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation :
- 2.5W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Turn On Delay Time :
- 7 ns
- Terminal Form :
- Gull wing
- Weight :
- 130mg
- Continuous Drain Current (ID) :
- 9A
- Pbfree Code :
- yes
- JESD-609 Code :
- e4
- Lead Free :
- Lead Free
- Threshold Voltage :
- 1.7V
- Number of Terminations :
- 8
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 9A, 10V
- Nominal Vgs :
- 1.7 V
- Power Dissipation-Max :
- 2.5W Ta
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Avalanche Energy Rating (Eas) :
- 32 mJ
- Drain to Source Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 4 ns
- Resistance :
- 20mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 19 ns
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 940pF @ 15V
- RoHS Status :
- ROHS3 Compliant
- Series :
- PowerTrench®
- Number of Pins :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- FET Type :
- N-Channel
- Factory Lead Time :
- 18 Weeks
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 9A
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Datasheets
- FDS8882
FDS8882 Documents

N-Channel Tape & Reel (TR) 20m Ω @ 9A, 10V ±20V 940pF @ 15V 20nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS8882 Description
FDS8882 is a 30V N-Channel PowerTrench? MOSFET. The FDS8882 has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET FDS8882 is in the SOIC-8 package with 2.5W power dissipation.
FDS8882 Features
-
Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 9 A
-
Max rDS(on) = 22.5 mΩ at VGS = 4.5 V, ID = 8 A
-
High-performance trench technology for extremely low rDS(on) and fast switching
-
High power and current handling capability
-
Termination is Lead-free and RoHS Compliant
FDS8882 Applications
-
Notebook System Regulators
-
cellular phones
-
laptop computers
-
photovoltaic systems
-
wind turbines
-
shunt voltage regulator and the series voltage regulator
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