FDS8880
- Mfr.Part #
- FDS8880
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 11.6A 8SOIC
- Stock
- 110,645
- In Stock :
- 110,645
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 11.6A, 10V
- Rise Time :
- 27ns
- Drain to Source Breakdown Voltage :
- 30V
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 2.5W
- Series :
- PowerTrench®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4mm
- Turn On Delay Time :
- 7 ns
- Continuous Drain Current (ID) :
- 11.6A
- Termination :
- SMD/SMT
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1235pF @ 15V
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Factory Lead Time :
- 18 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Resistance :
- 10MOhm
- Published :
- 2001
- Transistor Application :
- SWITCHING
- Dual Supply Voltage :
- 30V
- ECCN Code :
- EAR99
- Nominal Vgs :
- 2.5 V
- Current - Continuous Drain (Id) @ 25°C :
- 11.6A Ta
- Power Dissipation-Max :
- 2.5W Ta
- Vgs (Max) :
- ±20V
- Terminal Form :
- Gull wing
- Number of Pins :
- 8
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Weight :
- 130mg
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- JESD-609 Code :
- e4
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Threshold Voltage :
- 2.5V
- Length :
- 5mm
- Element Configuration :
- Single
- Height :
- 1.5mm
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 30V
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 38 ns
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 15 ns
- FET Type :
- N-Channel
- Number of Terminations :
- 8
- Current Rating :
- 11.6A
- Datasheets
- FDS8880
FDS8880 Documents

N-Channel Tape & Reel (TR) 10m Ω @ 11.6A, 10V ±20V 1235pF @ 15V 30nC @ 10V 8-SOIC (0.154, 3.90mm Width)
The FDS8880 is an N-channel MOSFET made with the PowerTrench? method. The FDS8880 N-Channel MOSFET was created with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. According to the FDS8880 datasheet, it has been tuned for low gate charge, low rDS(on), and quick switching speed.
FDS8880 Features
Low gate charge
? RoHS Compliant
? rDS(on) = 10m?, VGS = 10V, ID = 11.6A
? rDS(on) = 12m?, VGS = 4.5V, ID = 10.7A
? High power and current handling capability
? High performance trench technology for extremely low rDS(on)
FDS8880 Applications
? DC/DC converters
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