FDS8880

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e4

Rise Time :

27ns

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Weight :

130mg

Current Rating :

11.6A

Turn On Delay Time :

7 ns

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Radiation Hardening :

No

Factory Lead Time :

18 Weeks

Series :

PowerTrench®

Fall Time (Typ) :

15 ns

Operating Mode :

ENHANCEMENT MODE

Length :

5mm

Power Dissipation-Max :

2.5W Ta

Power Dissipation :

2.5W

Nominal Vgs :

2.5 V

Termination :

SMD/SMT

Published :

2001

Continuous Drain Current (ID) :

11.6A

Rds On (Max) @ Id, Vgs :

10m Ω @ 11.6A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1235pF @ 15V

Element Configuration :

Single

Dual Supply Voltage :

30V

Number of Pins :

8

Contact Plating :

Tin

Transistor Element Material :

SILICON

Resistance :

10MOhm

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Lead Free :

Lead Free

Number of Elements :

1

FET Type :

N-Channel

Number of Terminations :

8

Voltage - Rated DC :

30V

Threshold Voltage :

2.5V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Height :

1.5mm

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

38 ns

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

11.6A Ta

Width :

4mm

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)