FDS8880

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Mfr.Part #
FDS8880
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 11.6A 8SOIC
Stock
110,645
In Stock :
110,645

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
REACH SVHC :
No SVHC
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Rds On (Max) @ Id, Vgs :
10m Ω @ 11.6A, 10V
Rise Time :
27ns
Drain to Source Breakdown Voltage :
30V
Gate to Source Voltage (Vgs) :
20V
Power Dissipation :
2.5W
Series :
PowerTrench®
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
4mm
Turn On Delay Time :
7 ns
Continuous Drain Current (ID) :
11.6A
Termination :
SMD/SMT
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Input Capacitance (Ciss) (Max) @ Vds :
1235pF @ 15V
Transistor Element Material :
SILICON
Number of Elements :
1
Terminal Position :
Dual
Factory Lead Time :
18 Weeks
Operating Temperature :
-55°C~150°C TJ
Resistance :
10MOhm
Published :
2001
Transistor Application :
SWITCHING
Dual Supply Voltage :
30V
ECCN Code :
EAR99
Nominal Vgs :
2.5 V
Current - Continuous Drain (Id) @ 25°C :
11.6A Ta
Power Dissipation-Max :
2.5W Ta
Vgs (Max) :
±20V
Terminal Form :
Gull wing
Number of Pins :
8
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Contact Plating :
Tin
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Weight :
130mg
Vgs(th) (Max) @ Id :
2.5V @ 250μA
JESD-609 Code :
e4
Packaging :
Tape and Reel (TR)
Pbfree Code :
yes
Threshold Voltage :
2.5V
Length :
5mm
Element Configuration :
Single
Height :
1.5mm
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Mounting Type :
Surface Mount
Voltage - Rated DC :
30V
Mount :
Surface Mount
Turn-Off Delay Time :
38 ns
Radiation Hardening :
No
Fall Time (Typ) :
15 ns
FET Type :
N-Channel
Number of Terminations :
8
Current Rating :
11.6A
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS8880 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Mounting Type:Surface Mount, Number of Terminations:8, FDS8880 pinout, FDS8880 datasheet PDF, FDS8880 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS8880 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS8880


N-Channel Tape & Reel (TR) 10m Ω @ 11.6A, 10V ±20V 1235pF @ 15V 30nC @ 10V 8-SOIC (0.154, 3.90mm Width)

FDS8880 Description


The FDS8880 is an N-channel MOSFET made with the PowerTrench? method. The FDS8880 N-Channel MOSFET was created with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. According to the FDS8880 datasheet, it has been tuned for low gate charge, low rDS(on), and quick switching speed.


FDS8880 Features


Low gate charge
? RoHS Compliant
? rDS(on) = 10m?, VGS = 10V, ID = 11.6A
? rDS(on) = 12m?, VGS = 4.5V, ID = 10.7A
? High power and current handling capability
? High performance trench technology for extremely low rDS(on)


FDS8880 Applications


? DC/DC converters
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