FDS8878
- Mfr.Part #
- FDS8878
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 10.2A 8SOIC
- Stock
- 141,036
- In Stock :
- 141,036
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 9 ns
- Nominal Vgs :
- 2.5 V
- Voltage - Rated DC :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Threshold Voltage :
- 2.5V
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- PowerTrench®
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 10.2A Ta
- Published :
- 2001
- Power Dissipation :
- 2.5W
- JESD-609 Code :
- e4
- Rise Time :
- 29ns
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 10.2A, 10V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Current Rating :
- 10.2A
- Length :
- 5mm
- Number of Terminations :
- 8
- Number of Pins :
- 8
- Mount :
- Surface Mount
- Width :
- 4mm
- Resistance :
- 14mOhm
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 18 ns
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 897pF @ 15V
- Continuous Drain Current (ID) :
- 10.2A
- Drain to Source Breakdown Voltage :
- 30V
- Turn-Off Delay Time :
- 45 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Weight :
- 130mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.5mm
- Avalanche Energy Rating (Eas) :
- 57 mJ
- Factory Lead Time :
- 18 Weeks
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 2.5W Ta
- Datasheets
- FDS8878

N-Channel Tape & Reel (TR) 14m Ω @ 10.2A, 10V ±20V 897pF @ 15V 26nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS8878 Description
With either synchronous or traditional switching PWM controllers, this N-Channel MOSFET has been specifically created to increase the overall efficiency of DC/DC converters. Low gate charge, low rDS(on), and quick switching speed have all been optimized for.
FDS8878 Features
-
rDS(on) = 14m?, VGS = 10V, ID = 10.2A
-
rDS(on) = 17m?, VGS = 4.5V, ID = 9.3A
-
High-performance trench technology for extremely low rDS(on)
-
Low gate charge
-
High power and current handling capability
-
RoHS Compliant
FDS8878 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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