FDS8878

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Mfr.Part #
FDS8878
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 10.2A 8SOIC
Stock
141,036
In Stock :
141,036

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
10.2A
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Series :
PowerTrench®
JESD-609 Code :
e4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Terminal Position :
Dual
Width :
4mm
Transistor Element Material :
SILICON
Gate to Source Voltage (Vgs) :
20V
Number of Terminations :
8
Current Rating :
10.2A
Height :
1.5mm
Length :
5mm
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Factory Lead Time :
18 Weeks
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Contact Plating :
Tin
Avalanche Energy Rating (Eas) :
57 mJ
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Current - Continuous Drain (Id) @ 25°C :
10.2A Ta
Threshold Voltage :
2.5V
Rds On (Max) @ Id, Vgs :
14m Ω @ 10.2A, 10V
Number of Elements :
1
Radiation Hardening :
No
Weight :
130mg
Number of Pins :
8
Element Configuration :
Single
REACH SVHC :
No SVHC
Package / Case :
8-SOIC (0.154, 3.90mm Width)
RoHS Status :
ROHS3 Compliant
Terminal Form :
Gull wing
Input Capacitance (Ciss) (Max) @ Vds :
897pF @ 15V
Resistance :
14mOhm
Fall Time (Typ) :
18 ns
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 10V
Voltage - Rated DC :
30V
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Vgs (Max) :
±20V
Drain to Source Breakdown Voltage :
30V
Power Dissipation-Max :
2.5W Ta
Published :
2001
Lead Free :
Lead Free
Pbfree Code :
yes
Nominal Vgs :
2.5 V
Mount :
Surface Mount
Rise Time :
29ns
Turn-Off Delay Time :
45 ns
Turn On Delay Time :
9 ns
Power Dissipation :
2.5W
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS8878 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:8, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), FDS8878 pinout, FDS8878 datasheet PDF, FDS8878 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS8878 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS8878


N-Channel Tape & Reel (TR) 14m Ω @ 10.2A, 10V ±20V 897pF @ 15V 26nC @ 10V 8-SOIC (0.154, 3.90mm Width)

FDS8878 Description


With either synchronous or traditional switching PWM controllers, this N-Channel MOSFET has been specifically created to increase the overall efficiency of DC/DC converters. Low gate charge, low rDS(on), and quick switching speed have all been optimized for.



FDS8878 Features


  • rDS(on) = 14m?, VGS = 10V, ID = 10.2A

  • rDS(on) = 17m?, VGS = 4.5V, ID = 9.3A

  • High-performance trench technology for extremely low rDS(on)

  • Low gate charge

  • High power and current handling capability

  • RoHS Compliant



FDS8878 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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