FDS8870
- Mfr.Part #
- FDS8870
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 18A 8SOIC
- Stock
- 23,703
- In Stock :
- 23,703
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Weight :
- 130mg
- Series :
- PowerTrench®
- Drain to Source Breakdown Voltage :
- 30V
- Terminal Position :
- Dual
- Number of Pins :
- 8
- Nominal Vgs :
- 2.5 V
- Height :
- 1.5mm
- Terminal Form :
- Gull wing
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Power Dissipation-Max :
- 2.5W Ta
- Fall Time (Typ) :
- 21 ns
- Length :
- 5mm
- Turn On Delay Time :
- 9 ns
- Turn-Off Delay Time :
- 60 ns
- Avalanche Energy Rating (Eas) :
- 420 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 8
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 112nC @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Width :
- 4mm
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 18A
- Power Dissipation :
- 2.5W
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 4.2mOhm
- Current Rating :
- 18A
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 30V
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 18 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 18A Ta
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Published :
- 2001
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e4
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 4615pF @ 15V
- Rds On (Max) @ Id, Vgs :
- 4.2m Ω @ 18A, 10V
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Rise Time :
- 48ns
- Threshold Voltage :
- 2.5V
- Datasheets
- FDS8870
FDS8870 Documents

N-Channel Tape & Reel (TR) 4.2m Ω @ 18A, 10V ±20V 4615pF @ 15V 112nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS8870 Description
The N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS and fast switching speed.
FDS8870 Features
rDs(on)=4.2m Ω, Vgs=10V,lp=18A rDS(on)=4.9m Ω ,Vgs=4.5V , p=17A
. High performance trech technology for extremely low DS(on
Low gate charge
I High power and current handling capability
RoHS Compliant
FDS8870 Applications
DC/DC converters
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