FDS8842NZ

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Mfr.Part #
FDS8842NZ
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 40V 14.9A 8SOIC
Stock
22,147
In Stock :
22,147

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Vgs (Max) :
±20V
Drain to Source Breakdown Voltage :
40V
Number of Elements :
1
Width :
3.9mm
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
JESD-609 Code :
e3
Mount :
Surface Mount
Factory Lead Time :
9 Weeks
Series :
PowerTrench®
Length :
4.9mm
Lead Free :
Lead Free
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
73nC @ 10V
Feedback Cap-Max (Crss) :
330 pF
Transistor Application :
SWITCHING
Power Dissipation :
2.5W
Fall Time (Typ) :
5 ns
Rise Time :
7ns
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Vgs(th) (Max) @ Id :
3V @ 250µA
Packaging :
Tape and Reel (TR)
Gate to Source Voltage (Vgs) :
20V
Turn-Off Delay Time :
34 ns
Terminal Finish :
Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
8
Power Dissipation-Max :
2.5W Ta
Element Configuration :
Single
Resistance :
7mOhm
Rds On (Max) @ Id, Vgs :
7m Ω @ 14.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
3845pF @ 15V
Turn On Delay Time :
13 ns
Current - Continuous Drain (Id) @ 25°C :
14.9A Ta
Pbfree Code :
yes
Transistor Element Material :
SILICON
Terminal Form :
Gull wing
Radiation Hardening :
No
Weight :
130mg
Number of Pins :
8
FET Type :
N-Channel
Continuous Drain Current (ID) :
14.9A
Terminal Position :
Dual
Mounting Type :
Surface Mount
Height :
1.575mm
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS8842NZ from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C~150°C TJ, Number of Terminations:8, Number of Pins:8, Mounting Type:Surface Mount, FDS8842NZ pinout, FDS8842NZ datasheet PDF, FDS8842NZ amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS8842NZ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS8842NZ


N-Channel Tape & Reel (TR) 7m Ω @ 14.9A, 10V ±20V 3845pF @ 15V 73nC @ 10V 8-SOIC (0.154, 3.90mm Width)

FDS8842NZ Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3845pF @ 15V.This device conducts a continuous drain current (ID) of 14.9A, which is the maximum continuous current transistor can conduct.Using VGS=40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 34 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

FDS8842NZ Features


a continuous drain current (ID) of 14.9A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 34 ns


FDS8842NZ Applications


There are a lot of ON Semiconductor
FDS8842NZ applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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