FDS8813NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Continuous Drain Current (ID) :

18.5A

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Mount :

Surface Mount

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Radiation Hardening :

No

Turn On Delay Time :

13 ns

Transistor Element Material :

SILICON

Terminal Finish :

Tin

Time@Peak Reflow Temperature-Max (s) :

30

Termination :

SMD/SMT

Series :

PowerTrench®

Drain to Source Breakdown Voltage :

30V

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Published :

2013

Resistance :

4.5mOhm

Length :

4.9mm

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Threshold Voltage :

1.8V

Width :

3.9mm

Lead Free :

Lead Free

Vgs (Max) :

±20V

Dual Supply Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

4145pF @ 15V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

2.5W

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

2.5W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Turn-Off Delay Time :

39 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Mounting Type :

Surface Mount

Factory Lead Time :

18 Weeks

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 18.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Contact Plating :

Tin

Number of Pins :

8

Fall Time (Typ) :

7 ns

Terminal Position :

Dual

Number of Elements :

1

Rise Time :

8ns

Height :

1.575mm

Nominal Vgs :

1.8 V

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

18.5A Ta

Weight :

130mg

Gate Charge (Qg) (Max) @ Vgs :

76nC @ 10V

Element Configuration :

Single

Feedback Cap-Max (Crss) :

520 pF