FDS8690

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

7.6m Ω @ 14A, 10V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.0076Ohm

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Turn-Off Delay Time :

26 ns

Weight :

130mg

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Rise Time :

1.8ns

Nominal Vgs :

1.6 V

Turn On Delay Time :

8 ns

Lead Free :

Lead Free

Terminal Form :

Gull wing

Series :

PowerTrench®

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation :

2.5W

Pbfree Code :

yes

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Fall Time (Typ) :

19 ns

Terminal Position :

Dual

REACH SVHC :

No SVHC

Number of Terminations :

8

Continuous Drain Current (ID) :

14A

Mounting Type :

Surface Mount

Number of Pins :

8

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

18 Weeks

Power Dissipation-Max :

2.5W Ta

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

30V