FDS8672S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Turn-Off Delay Time :

26 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2.5W Ta

Height :

1.5mm

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 18A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Resistance :

4.8mOhm

Rise Time :

4ns

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Pbfree Code :

yes

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

18A

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Threshold Voltage :

2.1V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

12 ns

Length :

5mm

Element Configuration :

Single

Factory Lead Time :

18 Weeks

Fall Time (Typ) :

4 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

JESD-609 Code :

e4

Width :

4mm

FET Type :

N-Channel

Power Dissipation :

1W

Series :

PowerTrench®, SyncFET™

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Weight :

130mg

Nominal Vgs :

2.1 V

Drain to Source Breakdown Voltage :

30V

Feedback Cap-Max (Crss) :

205 pF

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

2670pF @ 15V