FDS8670

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

8

Power Dissipation-Max :

2.5W Ta

Pin Count :

8

Drain-source On Resistance-Max :

0.0037Ohm

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

105A

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

21A

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

4.04pF @ 15V

JESD-30 Code :

R-PDSO-G8

Series :

PowerTrench®

Transistor Element Material :

SILICON

FET Type :

N-Channel

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

3V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

21A Ta

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 21A, 10V