FDS8670
- Mfr.Part #
- FDS8670
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 21A 8SOIC
- Stock
- 25,418
- In Stock :
- 25,418
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- COMMERCIAL
- Drain to Source Voltage (Vdss) :
- 30V
- Pin Count :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Finish :
- MATTE TIN
- Series :
- PowerTrench®
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 4.04pF @ 15V
- Packaging :
- Tape and Reel (TR)
- Drain-source On Resistance-Max :
- 0.0037Ohm
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 3.7m Ω @ 21A, 10V
- Number of Terminations :
- 8
- Drain Current-Max (Abs) (ID) :
- 21A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 30V
- Surface Mount :
- yes
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- JESD-30 Code :
- R-PDSO-G8
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta
- Power Dissipation-Max :
- 2.5W Ta
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 105A
- Vgs (Max) :
- ±20V
- Datasheets
- FDS8670

N-Channel Tape & Reel (TR) 3.7m Ω @ 21A, 10V ±20V 4.04pF @ 15V 82nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
FDS8670 Overview
The maximum input capacitance of this device is 4.04pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 21A.There is no pulsed drain current maximum for this device based on its rated peak drain current 105A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
FDS8670 Features
based on its rated peak drain current 105A.
a 30V drain to source voltage (Vdss)
FDS8670 Applications
There are a lot of Rochester Electronics, LLC
FDS8670 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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