FDS86267P

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Mfr.Part #
FDS86267P
Manufacturer
Fairchild Semiconductor
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
SMALL SIGNAL FIELD-EFFECT TRANSI
Stock
17,783
In Stock :
17,783

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
JEDEC-95 Code :
MS-012AA
Operating Temperature :
-55°C~150°C TJ
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Rds On (Max) @ Id, Vgs :
255m Ω @ 2.2A, 10V
Packaging :
Tape and Reel (TR)
Terminal Form :
Gull wing
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Dual
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
260
Series :
PowerTrench®
Drain to Source Voltage (Vdss) :
150V
Vgs (Max) :
±25V
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Transistor Element Material :
SILICON
Element Configuration :
Single
DS Breakdown Voltage-Min :
150V
Weight :
130mg
FET Type :
P-Channel
Number of Elements :
1
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Number of Terminations :
8
Mount :
Surface Mount
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 10V
JESD-609 Code :
e4
Feedback Cap-Max (Crss) :
2.3 pF
Mounting Type :
Surface Mount
ECCN Code :
EAR99
Continuous Drain Current (ID) :
2.2A
Factory Lead Time :
9 Weeks
Power Dissipation-Max :
1W Ta
Vgs(th) (Max) @ Id :
4V @ 250µA
Current - Continuous Drain (Id) @ 25°C :
2.2A Ta
Drain-source On Resistance-Max :
0.255Ohm
Number of Pins :
8
Input Capacitance (Ciss) (Max) @ Vds :
1130pF @ 75V
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDS86267P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Terminations:8, Mounting Type:Surface Mount, Number of Pins:8, FDS86267P pinout, FDS86267P datasheet PDF, FDS86267P amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDS86267P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDS86267P


P-Channel Tape & Reel (TR) 255m Ω @ 2.2A, 10V ±25V 1130pF @ 75V 16nC @ 10V 150V 8-SOIC (0.154, 3.90mm Width)

FDS86267P    Description

 

  This P-channel MOSFET is produced using an advanced PowerTrench process that combines shielded gate technology. This process has been optimized to minimize the on-resistance while maintaining excellent switching performance.


FDS86267P    Features


Shielded grid MOSFET technology

Maximum rDS (on) = 255m Ω (VGS =-10V, ID =-2.2A)

Maximum rDS (on) = 290m Ω (VGS =-6V, ID =-2A)

The rDS (on) of medium voltage P-channel silicon technology is very low, which is very suitable for situations with low Qg.

This product has been optimized for applications requiring fast switches and load switches.

100% tested by UIL

Comply with RoHS standard

 

FDS86267P     Applications


Active Clamp Switch

Load Switch


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