FDS86267P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

Weight :

130mg

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

255m Ω @ 2.2A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Application :

SWITCHING

Vgs (Max) :

±25V

Packaging :

Tape and Reel (TR)

JEDEC-95 Code :

MS-012AA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Factory Lead Time :

9 Weeks

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta

Input Capacitance (Ciss) (Max) @ Vds :

1130pF @ 75V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.255Ohm

Drain to Source Voltage (Vdss) :

150V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Feedback Cap-Max (Crss) :

2.3 pF

JESD-609 Code :

e4

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Number of Terminations :

8

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Pbfree Code :

yes

Continuous Drain Current (ID) :

2.2A

DS Breakdown Voltage-Min :

150V

Power Dissipation-Max :

1W Ta

Mounting Type :

Surface Mount

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Series :

PowerTrench®

Number of Pins :

8