FDS86252

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Form :

Gull wing

Weight :

130mg

Number of Terminations :

8

Published :

2008

REACH SVHC :

No SVHC

Height :

1.5mm

Width :

5mm

Turn-Off Delay Time :

14 ns

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

4.5A

Drain-source On Resistance-Max :

0.055Ohm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Radiation Hardening :

No

JESD-609 Code :

e4

ECCN Code :

EAR99

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Mount :

Surface Mount

Number of Pins :

8

Terminal Position :

Dual

Power Dissipation-Max :

2.5W Ta 5W Tc

Series :

PowerTrench®

Rise Time :

1.6ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Feedback Cap-Max (Crss) :

5 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Fall Time (Typ) :

2.9 ns

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

955pF @ 75V

Power Dissipation :

5W

Threshold Voltage :

3.4V

Rds On (Max) @ Id, Vgs :

55m Ω @ 4.5A, 10V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Nominal Vgs :

3.4 V

Length :

4mm

Turn On Delay Time :

9.2 ns

Factory Lead Time :

9 Weeks

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Drain to Source Breakdown Voltage :

150V