FDS4935BZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 P-Channel (Dual)

Length :

5mm

Gate to Source Voltage (Vgs) :

25V

Terminal Finish :

Tin (Sn)

Number of Elements :

2

FET Feature :

Logic Level Gate

ECCN Code :

EAR99

JESD-609 Code :

e3

Lead Free :

Lead Free

Dual Supply Voltage :

-30V

Max Power Dissipation :

1.6W

Terminal Form :

Gull wing

Series :

PowerTrench®

Rise Time :

13ns

Mounting Type :

Surface Mount

Power - Max :

900mW

Number of Terminations :

8

Continuous Drain Current (ID) :

-6.9A

Current Rating :

-6.9A

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

22m Ω @ 6.9A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1360pF @ 15V

Drain to Source Breakdown Voltage :

-30V

Max Junction Temperature (Tj) :

150°C

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Turn-Off Delay Time :

68 ns

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Height :

1.75mm

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

Additional Feature :

ESD Protection

Fall Time (Typ) :

13 ns

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Width :

4mm

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

6.9A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

3V @ 250µA

Factory Lead Time :

10 Weeks

Element Configuration :

Dual

Turn On Delay Time :

12 ns

Pbfree Code :

yes

Nominal Vgs :

1.9 V

Published :

2006

REACH SVHC :

No SVHC

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation :

1.6W

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

2

Transistor Application :

SWITCHING

Resistance :

22mOhm

Threshold Voltage :

-1.9V

Weight :

187mg

Termination :

SMD/SMT

Voltage - Rated DC :

-30V