FDS4897C
- Mfr.Part #
- FDS4897C
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 47,713
- In Stock :
- 47,713
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Terminal Position :
- Dual
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Form :
- Gull wing
- Fall Time (Typ) :
- 18 ns
- JESD-609 Code :
- e3
- Published :
- 2005
- Transistor Element Material :
- SILICON
- Length :
- 5mm
- Resistance :
- 29mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Rise Time :
- 15ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 760pF @ 20V
- Number of Terminations :
- 8
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Turn-Off Delay Time :
- 45 ns
- Pbfree Code :
- yes
- Factory Lead Time :
- 12 Weeks
- Threshold Voltage :
- 1.9V
- Continuous Drain Current (ID) :
- 4.4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Number of Pins :
- 8
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 29m Ω @ 6.2A, 10V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Height :
- 1.5mm
- Drain to Source Breakdown Voltage :
- 40V
- Max Power Dissipation :
- 900mW
- Width :
- 4mm
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- FET Type :
- N and P-Channel
- Radiation Hardening :
- No
- FET Feature :
- Logic Level Gate
- Mounting Type :
- Surface Mount
- Number of Elements :
- 2
- Power Dissipation :
- 2W
- REACH SVHC :
- No SVHC
- Series :
- PowerTrench®
- Weight :
- 187mg
- Current - Continuous Drain (Id) @ 25°C :
- 6.2A 4.4A
- Datasheets
- FDS4897C
FDS4897C Documents

FDS4897C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS4897C Description
These dual N-channel and P-channel enhanced mode power field effect transistors are produced using advanced Power Tritch manufacturing processes that are customized to minimize on-resistance while maintaining excellent switching performance.
FDS4897C Features
Q1 N-Channel
6.2A, 40V
Max. RDS(on) = 29 mΩ at VGS = 10 V
Max. RDS(on) = 36 mΩ at VGS = 4.5 V
Q2 P-Channel
-4.4A, -40V
Max. RDS(on) = 46 mΩ at VGS = -10 V
Max. RDS(on) = 63 mΩ at VGS = -4.5 V
High power and handling capability in a widelyused surface mount package
RoHS compliant
FDS4897C Applications
This product is general usage and suitable for many different applications.
Inverter
Power Supplies
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