FDS4895C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pulsed Drain Current-Max (IDM) :

20A

JESD-30 Code :

R-PDSO-G8

Rds On (Max) @ Id, Vgs :

39m Ω @ 5.5A, 10V

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

FET Type :

N and P-Channel

FET Feature :

Standard

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

5.5A 4.4A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain Current-Max (Abs) (ID) :

5.5A

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Power - Max :

900mW

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

410pF @ 20V

DS Breakdown Voltage-Min :

40V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

2

Number of Terminations :

8

Series :

PowerTrench®

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.039Ohm

Drain to Source Voltage (Vdss) :

40V

Terminal Finish :

MATTE TIN

Mounting Type :

Surface Mount

Qualification Status :

COMMERCIAL