FDS4895C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

5.5A

DS Breakdown Voltage-Min :

40V

Input Capacitance (Ciss) (Max) @ Vds :

410pF @ 20V

Rds On (Max) @ Id, Vgs :

39m Ω @ 5.5A, 10V

Power - Max :

900mW

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Surface Mount :

yes

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

FET Type :

N and P-Channel

Number of Elements :

2

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Position :

Dual

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

Pbfree Code :

yes

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

20A

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.039Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Number of Terminations :

8

Qualification Status :

COMMERCIAL

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

5.5A 4.4A

Drain to Source Voltage (Vdss) :

40V

FET Feature :

Standard

JESD-30 Code :

R-PDSO-G8