FDS4885C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Pin Count :

8

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

22m Ω @ 7.5A, 10V

FET Feature :

Standard

JESD-30 Code :

R-PDSO-G8

Surface Mount :

yes

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

7.5A

DS Breakdown Voltage-Min :

40V

Power - Max :

900mW

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 20V

Drain to Source Voltage (Vdss) :

40V

Qualification Status :

COMMERCIAL

FET Type :

N and P-Channel

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Series :

PowerTrench®

Drain-source On Resistance-Max :

0.022Ohm

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

7.5A 6A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

20A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Position :

Dual

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Terminal Finish :

MATTE TIN