FDS4885C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 20V

Drain-source On Resistance-Max :

0.022Ohm

Terminal Finish :

MATTE TIN

FET Feature :

Standard

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

8

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Pulsed Drain Current-Max (IDM) :

20A

Power - Max :

900mW

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

7.5A

Drain to Source Voltage (Vdss) :

40V

DS Breakdown Voltage-Min :

40V

Current - Continuous Drain (Id) @ 25°C :

7.5A 6A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G8

Rds On (Max) @ Id, Vgs :

22m Ω @ 7.5A, 10V

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

PowerTrench®

Qualification Status :

COMMERCIAL

Operating Temperature :

-55°C~150°C TJ

Pin Count :

8

JESD-609 Code :

e3

Terminal Form :

Gull wing

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Application :

SWITCHING

FET Type :

N and P-Channel

RoHS Status :

ROHS3 Compliant