FDS4675

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.75mm

Current Rating :

-11A

Mounting Type :

Surface Mount

Fall Time (Typ) :

60 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

13m Ω @ 11A, 10V

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Length :

4.9mm

Input Capacitance (Ciss) (Max) @ Vds :

4350pF @ 20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Pbfree Code :

yes

Continuous Drain Current (ID) :

-11A

Number of Channels :

1

Rise Time :

29ns

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 4.5V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Series :

PowerTrench®

Number of Terminations :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Elements :

1

Width :

3.9mm

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Resistance :

13mOhm

Turn-Off Delay Time :

95 ns

Termination :

SMD/SMT

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Threshold Voltage :

-1.4V

Number of Pins :

8

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

2.4W

Terminal Form :

Gull wing

Max Junction Temperature (Tj) :

175°C

Dual Supply Voltage :

-40V

Pulsed Drain Current-Max (IDM) :

50A

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

2.4W Ta

Turn On Delay Time :

20 ns

Weight :

130mg

FET Type :

P-Channel

Terminal Position :

Dual

Transistor Element Material :

SILICON

Nominal Vgs :

-1.4 V

Vgs (Max) :

±20V

Mount :

Surface Mount

Contact Plating :

Tin

JESD-609 Code :

e3

Voltage - Rated DC :

-40V

Drain to Source Breakdown Voltage :

-40V

Radiation Hardening :

No

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Drain to Source Voltage (Vdss) :

40V